Abstract:
Optoelectronic and thermoelectric properties of A(3)InAs(3 )(A = Sr and Eu) Zintl compounds are investigated using FP-LAPW method with LDA, GGA and mBJ potentials for Sr(3)lnAs(3) in addition with Hubbard (U) for Eu3InAs3 based on DFT. Electronic properties reveal that both the compounds are direct bandgap semiconductors and their semiconducting nature is also supported by electrical resistivity (conductivity). The direct bandgap value is ranging from 0.50 to 0.74 and is decreasing with the replacement of Sr by Eu. The results divulge that both the compounds are optically active in the infrared region and optically anisotropic in nature and can be used as a shield for ultraviolet radiation and potential candidate for optoelectronic devices. Negative value of -383 and -411 mu V/K Seebeck coefficients suggest that electrons are the majority charge carriers. Low thermal conductivity, high Seebeck coefficient and high power factor indicating that A(3)InAs(3 )(A = Sr and Eu) are the potential matrix for thermoelectric application.
Description:
Bu yayın 06.11.1981 tarihli ve 17506 sayılı Resmî Gazete’de yayımlanan 2547 sayılı Yükseköğretim Kanunu’nun 4/c, 12/c, 42/c ve 42/d maddelerine dayalı 12/12/2019 tarih, 543 sayılı ve 05 numaralı Üniversite Senato Kararı ile hazırlanan Sakarya Üniversitesi Açık Bilim ve Açık Akademik Arşiv Yönergesi gereğince telif haklarına uygun olan nüsha açık akademik arşiv sistemine açık erişim olarak yüklenmiştir.
