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Selective Electrodeposition and Growth Mechanism of Thermoelectric Bismuth-Based Binary and Ternary Thin Films

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dc.contributor.authors Bicer, M; Kose, H; Sisman, I;
dc.date.accessioned 2020-02-24T14:14:42Z
dc.date.available 2020-02-24T14:14:42Z
dc.date.issued 2010
dc.identifier.citation Bicer, M; Kose, H; Sisman, I; (2010). Selective Electrodeposition and Growth Mechanism of Thermoelectric Bismuth-Based Binary and Ternary Thin Films. JOURNAL OF PHYSICAL CHEMISTRY C, 114, 8263-8256
dc.identifier.issn 1932-7447
dc.identifier.uri https://doi.org/10.1021/jp101221u
dc.identifier.uri https://hdl.handle.net/20.500.12619/44788
dc.description.abstract Different morphologies of thermoelectric Bi(1-x)Sb(x) and Bi(2-x)Sb(x)Te(3) thin films, including rods, dendrites, thin sheets, and spherical particles, were selectively obtained by an electrodeposition method at room temperature (25 degrees C). Cyclic voltammetry was used for determination of the deposition potentials of thin films. The influences of the deposition potential and the electrolyte composition on the films were studied. X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS) were employed to characterize the thin films. It was found that the different shaped Bi-rich Bi(1-x)Sb(x) films can be obtained by tuning the electrolyte composition. However, the Bi(2-x)Sb(x)Te(3) films can be fabricated by changing the deposition potential. In underpotentials (UPD), the reduction reactions of Bi(3+), Te(4+), and Sb(3+) take place to form (Bi(0.5)Sb(0.5))(2)Te(3). When the potential shifts into overpotentials (OPD), Bi(0.5)Sb(1.5)Te(3) is formed on the electrode surface. The EDS data indicates that the composition of the films is consistent with XRD results. The SEM investigations show that the growth mechanism of deposited Bi(1-x)Sb(x) and Bi(2-x)Sb(x)Te(3) films depends on the electrolyte composition and the deposition potential, respectively.
dc.language English
dc.publisher AMER CHEMICAL SOC
dc.subject Materials Science
dc.title Selective Electrodeposition and Growth Mechanism of Thermoelectric Bismuth-Based Binary and Ternary Thin Films
dc.type Article
dc.identifier.volume 114
dc.identifier.startpage 8256
dc.identifier.endpage 8263
dc.contributor.department Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü
dc.contributor.saüauthor Şişman, İlkay
dc.contributor.saüauthor Köse, Hilal
dc.relation.journal JOURNAL OF PHYSICAL CHEMISTRY C
dc.identifier.wos WOS:000277280800021
dc.identifier.doi 10.1021/jp101221u
dc.contributor.author Şişman, İlkay
dc.contributor.author Köse, Hilal


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