The electrical characteristics of a phthalocyanine heterojunction diode

Kandaz, Mehmet

dc.contributor.authors	Yakuphanoglu, F; Kandaz, M; Senkal, BF;
dc.date.accessioned	2020-02-24T14:14:22Z
dc.date.available	2020-02-24T14:14:22Z
dc.date.issued	2009
dc.identifier.citation	Yakuphanoglu, F; Kandaz, M; Senkal, BF; (2009). The electrical characteristics of a phthalocyanine heterojunction diode. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 11, 1042-1038
dc.identifier.issn	1454-4164
dc.identifier.uri	https://hdl.handle.net/20.500.12619/44732
dc.description.abstract	The electrical characteristics of nickel(II) phthalocyanine bearing 2'-aminophenylsulfanyl moieties/n-type silicon organic-on-inorganic semiconductor diode have been investigated by current-voltage characteristics. The diode indicates a good rectifying behavior. The ideality factor higher than unity of the diode is due to the interface states and series resistance. The ideality factor of the diode indicates that the NiPc appears to interact strongly with the Si inorganic semiconductor. The ideality factor n, barrier height Phi(b) and R-s values of the diode were determined and these electronic parameters vary with temperature. It is evaluated that at lower voltages, the current-voltage characteristics of the diode is controlled thermionic emission, whereas at higher voltages, the current of the diode is controlled by space charge injection limited mechanism.
dc.language	English
dc.publisher	NATL INST OPTOELECTRONICS
dc.subject	Physics
dc.title	The electrical characteristics of a phthalocyanine heterojunction diode
dc.type	Article
dc.identifier.volume	11
dc.identifier.startpage	1038
dc.identifier.endpage	1042
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü
dc.contributor.saüauthor	Kandaz, Mehmet
dc.relation.journal	JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
dc.identifier.wos	WOS:000269052100021
dc.identifier.eissn	1841-7132
dc.contributor.author	Kandaz, Mehmet