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Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

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dc.contributor.authors Yakuphanoglu, F; Kandaz, M; Senkal, BF;
dc.date.accessioned 2020-02-24T14:14:14Z
dc.date.available 2020-02-24T14:14:14Z
dc.date.issued 2008
dc.identifier.citation Yakuphanoglu, F; Kandaz, M; Senkal, BF; (2008). Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact. THIN SOLID FILMS, 516, 8796-8793
dc.identifier.issn 0040-6090
dc.identifier.uri https://doi.org/10.1016/j.tsf.2008.06.076
dc.identifier.uri https://hdl.handle.net/20.500.12619/44703
dc.description.abstract Electrical characteristics of the Al/p-type silicon/2,9,16,23-tetrakis-{6-(-thiophene-2-carboxylate)-hexylthio} phthalocyaninato cobalt(II) organic semiconductor contact have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor (1.33), barrier height (0.90 eV) and series resistance (314.5 k Omega) of the Al/p-Si/CoPc contact were obtained from current-voltage characteristics. The barrier height obtained for the Al/p-Si/CoPc diode is significantly higher than that of obtained for the conventional Al/p-Si Schottky diode. The CoPc organic layer modifies the effective barrier height of Al/p-Si Schottky diode as the organic film forms a physical barrier between Al metal and the p-Si. The interface-state density of the diode was determined and interface-state density was found to vary from 1.23x 10(14) eV(-1) cm(-2) to 0.69 x 10(14) eV(-1) cm(-2). It is evaluated that the CoPc organic layer modifies electrical parameters and interface properties of Al/p-Si junction. (c) 2008 Elsevier B.V. All rights reserved.
dc.language English
dc.publisher ELSEVIER SCIENCE SA
dc.subject Physics
dc.title Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact
dc.type Article
dc.identifier.volume 516
dc.identifier.startpage 8793
dc.identifier.endpage 8796
dc.contributor.department Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü
dc.contributor.saüauthor Kandaz, Mehmet
dc.relation.journal THIN SOLID FILMS
dc.identifier.wos WOS:000260579800101
dc.identifier.doi 10.1016/j.tsf.2008.06.076
dc.contributor.author Kandaz, Mehmet


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