Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state

Şentürk, Erdoğan

dc.contributor.authors	Senturk, E; Tumbek, L; Mikailov, FA; Saiehli, F;
dc.date.accessioned	2020-01-20T08:02:55Z
dc.date.available	2020-01-20T08:02:55Z
dc.date.issued	2007
dc.identifier.citation	Senturk, E; Tumbek, L; Mikailov, FA; Saiehli, F; (2007). Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state. CRYSTAL RESEARCH AND TECHNOLOGY, 42, 630-626
dc.identifier.issn	0232-1300
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32366
dc.identifier.uri	https://doi.org/10.1002/crat.200610875
dc.description.abstract	The results of investigations low frequency dielectric relaxation in layered ferroelectric TlInS2 crystals are presented. The measurements were performed in the temperature range of 180-230 K and in the frequency range of 5 kHz-1 MHz. Two different relaxation processes were observed in mentioned temperature interval. The crystal has "slow" and "fast" relaxation mechanisms in low and high frequency region, respectively. The presence of two different relaxation mechanisms in TlInS, is discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.language	English
dc.publisher	WILEY-V C H VERLAG GMBH
dc.subject	Crystallography
dc.title	Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state
dc.type	Article
dc.identifier.volume	42
dc.identifier.startpage	626
dc.identifier.endpage	630
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Şentürk, Erdoğan
dc.relation.journal	CRYSTAL RESEARCH AND TECHNOLOGY
dc.identifier.wos	WOS:000247163700015
dc.identifier.doi	10.1002/crat.200610875
dc.contributor.author	Şentürk, Erdoğan