Some special dielectric characteristics of TlGaSe2 layered crystals

Şentürk, Erdoğan

dc.contributor.authors	Senturk, E; Mikailov, FA;
dc.date.accessioned	2020-01-20T08:02:52Z
dc.date.available	2020-01-20T08:02:52Z
dc.date.issued	2006
dc.identifier.citation	Senturk, E; Mikailov, FA; (2006). Some special dielectric characteristics of TlGaSe2 layered crystals. CRYSTAL RESEARCH AND TECHNOLOGY, 41, 1135-1131
dc.identifier.issn	0232-1300
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32353
dc.identifier.uri	https://doi.org/10.1002/crat.200610733
dc.description.abstract	TlGaSe2 layered crystals were characterized with dielectric spectroscopy measurements. We have studied the memory effect within soliton regime, time relaxation in annealing temperature, and the effect of different cooling rate on conductivity and dielectric constant. The effects connected with the annealing time and cooling rate processes may be explained the theory of DDW. The measurements were carried out in a narrow temperature region (95-135 K). The temperature dependence of dielectric constant measurements show that the crystal reveals a weak dielectric anomaly at 101 K. A well-defined ferroclectric behaviour of first order transition was observed. (C) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.language	English
dc.publisher	WILEY-V C H VERLAG GMBH
dc.subject	Crystallography
dc.title	Some special dielectric characteristics of TlGaSe2 layered crystals
dc.type	Article
dc.identifier.volume	41
dc.identifier.startpage	1131
dc.identifier.endpage	1135
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Şentürk, Erdoğan
dc.relation.journal	CRYSTAL RESEARCH AND TECHNOLOGY
dc.identifier.wos	WOS:000242062000013
dc.identifier.doi	10.1002/crat.200610733
dc.contributor.author	Şentürk, Erdoğan