Incommensurate phase properties of TlGaSe2 layered crystals

Şentürk, Erdoğan

dc.contributor.authors	Senturk, E; Tumbek, L; Salehli, F; Mikailov, FA;
dc.date.accessioned	2020-01-20T08:02:45Z
dc.date.available	2020-01-20T08:02:45Z
dc.date.issued	2005
dc.identifier.citation	Senturk, E; Tumbek, L; Salehli, F; Mikailov, FA; (2005). Incommensurate phase properties of TlGaSe2 layered crystals. CRYSTAL RESEARCH AND TECHNOLOGY, 40, 252-248
dc.identifier.issn	0232-1300
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32321
dc.identifier.uri	https://doi.org/10.1002/crat.200410333
dc.description.abstract	The frequency and time dependence of the ac conductivity were measured within incommensurate phase in the frequency range 10(1)-10(7) Hz and analyzed. The electrical conductivity decreases with decreasing temperature, then saturates in mentioned temperature interval. The ac conductivity is proportional to w(s). The value f s decreases with increasing temperature which suggests hopping conduction mechanism. The time dependence of the conductivity exhibited exponential decay. It shows two conductivity relaxations in mentioned temperature interval. Moreover, the characteristic relaxation times decrease with decreasing annealing temperature. The two different relaxation times refer to two different incommensurate ordering in mentioned temperature interval. (c) 2005 WILEY-VCH Verlag GmbH T Co. KGaA, Weinheim.
dc.language	English
dc.publisher	WILEY-V C H VERLAG GMBH
dc.subject	Crystallography
dc.title	Incommensurate phase properties of TlGaSe2 layered crystals
dc.type	Article
dc.identifier.volume	40
dc.identifier.startpage	248
dc.identifier.endpage	252
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Şentürk, Erdoğan
dc.relation.journal	CRYSTAL RESEARCH AND TECHNOLOGY
dc.identifier.wos	WOS:000227639200011
dc.identifier.doi	10.1002/crat.200410333
dc.contributor.author	Şentürk, Erdoğan