Phonons on GaN(110)

Tütüncü, Hüseyin Murat

dc.contributor.authors	Tutuncu, HM; Miotto, R; Srivastava, GP; Tse, JS;
dc.date.accessioned	2020-01-20T08:02:04Z
dc.date.available	2020-01-20T08:02:04Z
dc.date.issued	2002
dc.identifier.citation	Tutuncu, HM; Miotto, R; Srivastava, GP; Tse, JS; (2002). Phonons on GaN(110). APPLIED PHYSICS LETTERS, 80, 3324-3322
dc.identifier.issn	0003-6951
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32057
dc.identifier.uri	https://doi.org/10.1063/1.1476401
dc.description.abstract	We present results of adiabatic bond-charge model calculations for the vibrational properties of the GaN(110) surface using electronic and structural data obtained from a first-principles pseudopotential method. It is found that in order to relate the energy locations of optical phonon modes on this surface with corresponding modes on nonnitride III-V(110) and II-VI(110) surfaces, it is necessary to consider scaling of results with the lattice constant in addition to the reduced mass. (C) 2002 American Institute of Physics.
dc.language	English
dc.publisher	AMER INST PHYSICS
dc.subject	Physics
dc.title	Phonons on GaN(110)
dc.type	Article
dc.identifier.volume	80
dc.identifier.startpage	3322
dc.identifier.endpage	3324
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Tütüncü, Hüseyin Murat
dc.relation.journal	APPLIED PHYSICS LETTERS
dc.identifier.wos	WOS:000175298400026
dc.identifier.doi	10.1063/1.1476401
dc.contributor.author	Tütüncü, Hüseyin Murat