Electronic and vibrational properties of the As : InP(110) and Sb : InP(110) surfaces

Tütüncü, Hüseyin Murat

dc.contributor.authors	Tutuncu, HM; Srivastava, GP;
dc.date.accessioned	2020-01-20T08:02:01Z
dc.date.available	2020-01-20T08:02:01Z
dc.date.issued	2002
dc.identifier.citation	Tutuncu, HM; Srivastava, GP; (2002). Electronic and vibrational properties of the As : InP(110) and Sb : InP(110) surfaces. PHYSICAL REVIEW B, 65, -
dc.identifier.issn	2469-9950
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32023
dc.identifier.uri	https://doi.org/10.1103/PhysRevB.65.035319
dc.description.abstract	We have investigated the atomic geometry, electronic structure, and vibrational properties of the As and Sb deposited InP(110)-(1 X 1) surface by using a combination of the plane-wave pseudopotential method and an adiabatic bond-charge method. For both adsorbates we have used the epitaxially continued layer structure. We have also used an exchange-reacted geometry for the adsorption of As. In general, our results agree well with available experimental measurements as well as recent ab initio calculations. It is found that the As:InP(110)-(1 X 1) and Sb:InP(110)-(1 X 1) systems are characterized by the presence of several phonon modes within the acoustic-optical band gap of bulk InP. The exchange-reacted geometry for As:InP(110) is further characterized by the presence of a clear gap of approximately 10 meV.
dc.language	English
dc.publisher	AMER PHYSICAL SOC
dc.subject	Physics
dc.title	Electronic and vibrational properties of the As : InP(110) and Sb : InP(110) surfaces
dc.type	Article
dc.identifier.volume	65
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Tütüncü, Hüseyin Murat
dc.relation.journal	PHYSICAL REVIEW B
dc.identifier.wos	WOS:000173448900078
dc.identifier.doi	10.1103/PhysRevB.65.035319
dc.identifier.eissn	2469-9969
dc.contributor.author	Tütüncü, Hüseyin Murat