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Diffusion kinetics of explosively treated and plasma nitrided Ti-6Al-4V alloy

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dc.contributor.authors Taktak, S; Akbulut, H;
dc.date.accessioned 2020-10-16T11:45:25Z
dc.date.available 2020-10-16T11:45:25Z
dc.date.issued 2004
dc.identifier.citation Taktak, S; Akbulut, H; (2004). Diffusion kinetics of explosively treated and plasma nitrided Ti-6Al-4V alloy. VACUUM, 75, 259-247
dc.identifier.issn 0042-207X
dc.identifier.uri https://doi.org/10.1016/j.vacuum.2004.03.004
dc.identifier.uri https://hdl.handle.net/20.500.12619/70146
dc.description.abstract Ti-6Al-4V alloys, which were exposed to an explosive shock process, were nitrided in nitrogen plasma in the temperature range of 700-900degreesC for 3-12 h. During the plasma nitriding, the surface layer consisted of TiN (delta), Ti2N (epsilon) and nitrogen solid solution layers (alpha-Ti). The growth rate of nitride and solid solution layers were found to be controlled by the diffusion of nitrogen. An effective nitriding was achieved due to high dislocation density and vacancy concentration. Based on the present layer growth data, an analytical model for multiphase diffusion was used to estimate the effective nitrogen atom diffusion coefficient in the nitride layers. The interface velocity equations were derived from Fick's law and a numerical method has been used to compute the diffusion coefficients of nitrogen in a binary multiphase Ti-TiN system. Depending on temperature and layer thickness, the activation energies of nitrogen in TiN and Ti2N phases were found to be 18,950 ( +/- 2116) and 27,925 ( +/- 1105) cal/mole, respectively. (C) 2004 Elsevier Ltd. All rights reserved.
dc.language English
dc.publisher PERGAMON-ELSEVIER SCIENCE LTD
dc.subject Physics
dc.title Diffusion kinetics of explosively treated and plasma nitrided Ti-6Al-4V alloy
dc.type Article
dc.identifier.volume 75
dc.identifier.startpage 247
dc.identifier.endpage 259
dc.contributor.department Sakarya Üniversitesi/Mühendislik Fakültesi/Metalurji Ve Malzeme Mühendisliği Bölümü
dc.contributor.saüauthor Akbulut, Hatem
dc.relation.journal VACUUM
dc.identifier.wos WOS:000223002100008
dc.identifier.doi 10.1016/j.vacuum.2004.03.004
dc.contributor.author Akbulut, Hatem


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