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Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties

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dc.contributor.authors Senturk, E; Erkovan, M; Okutan, M; Kosemen, A; Ozturk, S; Sahin, Y;
dc.date.accessioned 2020-03-06T08:32:48Z
dc.date.available 2020-03-06T08:32:48Z
dc.date.issued 2015
dc.identifier.citation Senturk, E; Erkovan, M; Okutan, M; Kosemen, A; Ozturk, S; Sahin, Y; (2015). Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 30, 485-482
dc.identifier.issn 1369-8001
dc.identifier.uri https://doi.org/10.1016/j.mssp.2014.10.053
dc.identifier.uri https://hdl.handle.net/20.500.12619/67396
dc.description.abstract We investigated the impedance parameters of cobalt titanium (Co-Ti) multilayer thin films deposited on native oxidized Si (100) substrate under ultra-high vacuum (4 x 10(-8) mbar) by magnetron sputtering at room temperature. Electrical properties of Co/Ti/Co multilayer films were analyzed depending on the thickness of Ti spacer layer with the impedance spectroscopy as a function of frequency. Co/Ti multilayer films exhibited dielectric relaxation in both real and imaginary part of dielectric constants at the kilohertz frequency region and piezoelectric properties at the megahertz frequency region. We determined that the fabricated multilayer films have complex and super imposed type behavior when DC conductivity is used at lower frequency, resonance event and relaxation properties. (C) 2014 Elsevier Ltd. All rights reserved.
dc.language English
dc.publisher ELSEVIER SCI LTD
dc.subject Physics
dc.title Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties
dc.type Article
dc.identifier.volume 30
dc.identifier.startpage 482
dc.identifier.endpage 485
dc.contributor.department Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor Şentürk, Erdoğan
dc.contributor.saüauthor Erkovan, Mustafa
dc.contributor.saüauthor Öztürk Muti, Serpil
dc.relation.journal MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.identifier.wos WOS:000347266900067
dc.identifier.doi 10.1016/j.mssp.2014.10.053
dc.identifier.eissn 1873-4081
dc.contributor.author Şentürk, Erdoğan
dc.contributor.author Erkovan, Mustafa
dc.contributor.author M. Okutan
dc.contributor.author A. Kosemen
dc.contributor.author Öztürk Muti, Serpil
dc.contributor.author Y. Sahin


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