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Electrodeposition and growth mechanism of SnSe thin films

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dc.contributor.authors Bicer, M; Sisman, I
dc.date.accessioned 2020-02-24T14:14:54Z
dc.date.available 2020-02-24T14:14:54Z
dc.date.issued 2011
dc.identifier.citation Bicer, M; Sisman, I (2011). Electrodeposition and growth mechanism of SnSe thin films. APPLIED SURFACE SCIENCE, 257, 2949-2944
dc.identifier.issn 0169-4332
dc.identifier.uri https://doi.org/10.1016/j.apsusc.2010.10.096
dc.identifier.uri https://hdl.handle.net/20.500.12619/44814
dc.description.abstract Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aqueous solution containing SnCl2, Na2SeO3, and EDTA at room temperature (25 degrees C). The electrochemical behaviors and the codeposition potentials of Sn and Se were explored by cyclic voltammetry. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and UV-vis absorption spectroscopy were employed to characterize the thin films. When the electrodeposition potential increased, the Se content in the films decreased. It was found that the stoichiometric SnSe thin films could be obtained at -0.50 V. The as-deposited films were crystallized in the preferential orientation along the (1 1 1) plane. The morphologies of SnSe films could be changed from spherical grains to platelet-like particles as the deposition potential increases. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of needle-like particles on the overlayer of the film. The optical absorption study showed the film has direct transition with band gap energy of 1.3 eV. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
dc.language English
dc.publisher ELSEVIER SCIENCE BV
dc.title Electrodeposition and growth mechanism of SnSe thin films
dc.type Article
dc.identifier.volume 257
dc.identifier.startpage 2944
dc.identifier.endpage 2949
dc.contributor.department Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü
dc.contributor.saüauthor Şişman, İlkay
dc.relation.journal APPLIED SURFACE SCIENCE
dc.identifier.wos WOS:000285963200087
dc.identifier.doi 10.1016/j.apsusc.2010.10.096
dc.identifier.eissn 1873-5584
dc.contributor.author Şişman, İlkay


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