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Effect of aliovalent Si/Bi partial substitution on propagation mechanisms of cracking and dislocation in Bi-2212 crystal system

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dc.contributor.authors Turgay, T; Yildirim, G;
dc.date.accessioned 2020-01-14T12:24:41Z
dc.date.available 2020-01-14T12:24:41Z
dc.date.issued 2019
dc.identifier.citation Turgay, T; Yildirim, G; (2019). Effect of aliovalent Si/Bi partial substitution on propagation mechanisms of cracking and dislocation in Bi-2212 crystal system. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 30, 7323-7314
dc.identifier.issn 0957-4522
dc.identifier.uri https://hdl.handle.net/20.500.12619/3841
dc.description.abstract This comprehensive study delves into the differentiation of mechanical performance and mechanical characteristics of Bi-site Si partial substituted Bi2.1-xSixSr2.0Ca1.1Cu2.0Oy superconducting ceramic materials with the assistant of Vickers microhardness measurements performed at the indentation test loads intervals 0.245N-2.940N. It is found that the propagations of voids, dislocations and cracks in the Bi-2212 crystal lattice accelerate dramatically because of the dramatic increment in the sizes of crack-producing omnipresent flaws, crack initiation sites, stress concentration regions, strain fields and stress raisers in the crystal matrix with enhancing the Si/Bi partial substitution level. Hence, the presence of Si inclusions in the Bi-2212 superconducting crystal structure makes the active and independent slip systems cancel immediately, and the cracks locate more rapidly into the critical propagation speed. The load required to break the material diminishes due to the reduced durable tetragonal phase. Namely, the Si inclusions favor considerably the intergranular fracture in the host crystal matrix. Besides, it is noted that the sensitivity to the applied load raises remarkably with the substitution level due to the entanglement of dislocations and cracks with each other. As for the mechanical characterization, all the materials studied exhibit the standard indentation size effect behavior (ISE nature) but in the reduction trend with the substitution level. All the findings are also supported by the bulk density and residual porosity parameters. The bulk density experimental results confirm the regression of elastic properties and fracture strength with the Si/Bi substitution level. At the same time, we survey the original mechanical hardness parameters at the vicinity of plateau limit regions via the Hays-Kendall (HK) and indentation-induced cracking (IIC) approaches for the first time. According to the experimental measurement results, the IIC model is observed to be the best theoretical model to discuss the load-independent Vickers hardness parameters of Bi-site Si partial substituted Bi-2212 ceramic compounds.
dc.description.uri https://doi.org/10.1007/s10854-019-01044-2
dc.language English
dc.publisher SPRINGER
dc.subject Physics
dc.title Effect of aliovalent Si/Bi partial substitution on propagation mechanisms of cracking and dislocation in Bi-2212 crystal system
dc.type Article
dc.identifier.volume 30
dc.identifier.startpage 7314
dc.identifier.endpage 7323
dc.contributor.department Sakarya Üniversitesi/Sanat Tasarım Ve Mimarlık Fakültesi/Mimarlık Bölümü
dc.contributor.saüauthor Turğay, Tahsin
dc.relation.journal JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
dc.identifier.wos WOS:000467637200012
dc.identifier.doi 10.1007/s10854-019-01044-2
dc.identifier.eissn 1573-482X
dc.contributor.author Turğay, Tahsin
dc.contributor.author G. Yildirim


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