Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature

Şentürk, Erdoğan

dc.contributor.authors	Okutan, M; Azak, F; Sahin, P; Cavdar, M; Erdem, Z; Senturk, E;
dc.date.accessioned	2020-01-20T08:02:53Z
dc.date.available	2020-01-20T08:02:53Z
dc.date.issued	2007
dc.identifier.citation	Okutan, M; Azak, F; Sahin, P; Cavdar, M; Erdem, Z; Senturk, E; (2007). Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature. CRYSTAL RESEARCH AND TECHNOLOGY, 42, 1136-1132
dc.identifier.issn	0232-1300
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32360
dc.identifier.uri	https://doi.org/10.1002/crat.200710964
dc.description.abstract	Complex Impedance Spectroscopy has been employed for the study of absorption kinetics at TIGaSe2 layered crystal under Bias voltage at room temperature. Two relaxations mechanisms have been observed. The crystal has "slow" and "fast" relaxation mechanisms in low and high frequency region, respectively. The complex impedance spectra were fitted by the superposition of two Cole-Cole types of relaxations. The fast relaxation in the higher frequency region may be due to dipolar relaxation and the slow relaxation in the low frequency region may be due to Maxwell-Wagner type relaxation.
dc.language	English
dc.publisher	WILEY-V C H VERLAG GMBH
dc.subject	Crystallography
dc.title	Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature
dc.type	Article
dc.identifier.volume	42
dc.identifier.startpage	1132
dc.identifier.endpage	1136
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Şentürk, Erdoğan
dc.relation.journal	CRYSTAL RESEARCH AND TECHNOLOGY
dc.identifier.wos	WOS:000250854600018
dc.identifier.doi	10.1002/crat.200710964
dc.contributor.author	Şentürk, Erdoğan