Characterization of the Ge(001)/Si-(2 x 1) surface using lattice dynamics

Tütüncü, Hüseyin Murat

dc.contributor.authors	Tutuncu, HM; Jenkins, SJ; Srivastava, GP;
dc.date.accessioned	2020-01-20T08:02:53Z
dc.date.available	2020-01-20T08:02:53Z
dc.date.issued	1999
dc.identifier.citation	Tutuncu, HM; Jenkins, SJ; Srivastava, GP; (1999). Characterization of the Ge(001)/Si-(2 x 1) surface using lattice dynamics. PHYSICAL REVIEW B, 60, 10651-10648
dc.identifier.issn	1098-0121
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32358
dc.identifier.uri	doi.org/ 10.1103/PhysRevB.60.10648
dc.description.abstract	We present lattice dynamical calculations for segregated and nonsegregated models of the monolayer Si-covered Ge(001) surface. The calculations were performed using the adiabatic bend-charge model, with structural parameters and electronic charge distributions taken from recent ab initio pseudopotential calculations. We find that adsorption of Si results in several characteristic phonon modes above the bulk continuum. These modes constitute a signature that may be used to distinguish between surface and subsurface Si adsorbate layers. [S0163-1829(99)00840-1].
dc.language	English
dc.publisher	AMER PHYSICAL SOC
dc.subject	Physics
dc.title	Characterization of the Ge(001)/Si-(2 x 1) surface using lattice dynamics
dc.type	Article
dc.identifier.volume	60
dc.identifier.startpage	10648
dc.identifier.endpage	10651
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Tütüncü, Hüseyin Murat
dc.relation.journal	PHYSICAL REVIEW B
dc.identifier.wos	WOS:000083427600023
dc.identifier.eissn	1550-235X
dc.contributor.author	Tütüncü, Hüseyin Murat