Thermal hysteresis and memory effects in TlGaSe2 crystal with incommensurate phase

Şentürk, Erdoğan

dc.contributor.authors	Mikailov, FA; Senturk, E; Tumbek, L; Mammadov, TG; Mammadov, TS;
dc.date.accessioned	2020-01-20T08:02:46Z
dc.date.available	2020-01-20T08:02:46Z
dc.date.issued	2005
dc.identifier.citation	Mikailov, FA; Senturk, E; Tumbek, L; Mammadov, TG; Mammadov, TS; (2005). Thermal hysteresis and memory effects in TlGaSe2 crystal with incommensurate phase. PHASE TRANSITIONS, 78, 419-413
dc.identifier.issn	0141-1594
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32326
dc.identifier.uri	https://doi.org/10.1080/01411590500132445
dc.description.abstract	Temperature dependencies of dielectric permittivity of TlGaSe2 have been measured under various thermal cycles. Peculiarities of anomalies in temperature dependencies of dielectric permittivity corresponding to structural phase transitions at 108 and 115K are discussed. The coexistence of two different incommensurate structures in TlGaSe2 was proposed. The phase transitions at 108 and 115K are considered as commensurate lock-in transitions. As a result a new model of the structural phase transitions in TlGaSe2 has been suggested.
dc.language	English
dc.publisher	TAYLOR & FRANCIS LTD
dc.subject	Physics
dc.title	Thermal hysteresis and memory effects in TlGaSe2 crystal with incommensurate phase
dc.type	Article
dc.identifier.volume	78
dc.identifier.startpage	413
dc.identifier.endpage	419
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Şentürk, Erdoğan
dc.relation.journal	PHASE TRANSITIONS
dc.identifier.wos	WOS:000230649700005
dc.identifier.doi	10.1080/01411590500132445
dc.identifier.eissn	1029-0338
dc.contributor.author	Şentürk, Erdoğan