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DFT studies for optoelectronic properties of pure l-alanine and doped with Li

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dc.contributor.authors Aliabad, HAR; Mojarradi, Z; Yalcin, BG;
dc.date.accessioned 2020-01-20T08:02:21Z
dc.date.available 2020-01-20T08:02:21Z
dc.date.issued 2016
dc.identifier.citation Aliabad, HAR; Mojarradi, Z; Yalcin, BG; (2016). DFT studies for optoelectronic properties of pure l-alanine and doped with Li. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 27, 4897-4887
dc.identifier.issn 0957-4522
dc.identifier.uri https://hdl.handle.net/20.500.12619/32191
dc.identifier.uri https://doi.org/10.1007/s10854-016-4372-1
dc.description.abstract Structural and optoelectronic properties of the pure l-alanine (CH3CHNH2COOH) and substituted with Li in two different sites CH3CHNHLiCOOH (basic) and CH3CHNH2COOLi (acidic) are systematically investigated by the density functional theory (DFT). We have used WIEN2k and Gaussian 09W codes for structural optimization. The optimized lattice constants are found to be consistent with the experimental results. l-Alanine is a wide indirect band gap compound and hence is an attractive material for optoelectronic applications. The calculated fundamental band gaps for CH3CHNH2COOH, CH3CHNHLiCOOH and CH3CHNH2COOLi are found to be 4.85, 3.50 and 2.40 eV, respectively. Obtained band gap value of 4.85 eV for l-alanine is in coincidence with the experimental (4.67 eV) and theoretical results (4.54 and 5.07 eV). Substitution of Li with H element in COOH chain, the transition from an indirect to direct band gap has been observed in sample. Optical properties such as dielectric functions and energy loss functions are also evaluated and discussed in detail.
dc.language English
dc.publisher SPRINGER
dc.subject Physics
dc.title DFT studies for optoelectronic properties of pure l-alanine and doped with Li
dc.type Article
dc.identifier.volume 27
dc.identifier.startpage 4887
dc.identifier.endpage 4897
dc.contributor.department Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor Yalçın, Battal Gazi
dc.relation.journal JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
dc.identifier.wos WOS:000373742500095
dc.identifier.doi 10.1007/s10854-016-4372-1
dc.identifier.eissn 1573-482X
dc.contributor.author H. A. Rahnamaye Aliabad
dc.contributor.author Z. Mojarradi
dc.contributor.author Yalçın, Battal Gazi


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