Band Gap Calculations of Ternary InN0.03125P0.96875 Alloy

dc.contributor.authors	Ustundag, M; Yalcin, BG; Bagci, S; Aslan, M;
dc.date.accessioned	2020-01-20T08:02:16Z
dc.date.available	2020-01-20T08:02:16Z
dc.date.issued	2015
dc.identifier.citation	Ustundag, M; Yalcin, BG; Bagci, S; Aslan, M; (2015). Band Gap Calculations of Ternary InN0.03125P0.96875 Alloy. ACTA PHYSICA POLONICA A, 128, B137-B135
dc.identifier.issn	0587-4246
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32160
dc.identifier.uri	https://doi.org/10.12693/APhysPolA.128.B-135
dc.description.abstract	In the current study, structural and electronic properties of ternary dilute nitride InNxP1-x alloys have been investigated by using density functional theory. The equilibrium lattice parameter of studied material has been calculated in zinc-blende phase. 2 x 2 x 2 supercell with 64 atoms has been used for calculations. The lattice parameter of InN0.03125P0.96875 alloy is found to be 5.852 angstrom. By means of the equilibrium lattice parameter, electronic band structure has been calculated for dilute 3.125% nitride composition. It is found that a ternary InN0.03125P0.96875 alloy is a direct band gap semiconductor with energy band gap of 1.198 eV.
dc.language	English
dc.publisher	POLISH ACAD SCIENCES INST PHYSICS
dc.subject	Physics
dc.title	Band Gap Calculations of Ternary InN0.03125P0.96875 Alloy
dc.type	Proceedings Paper
dc.identifier.volume	128
dc.identifier.startpage	B135
dc.identifier.endpage	B137
dc.relation.journal	ACTA PHYSICA POLONICA A
dc.identifier.wos	WOS:000363011700037
dc.identifier.doi	10.12693/APhysPolA.128.B-135
dc.identifier.eissn	1898-794X