Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties

Şentürk, Erdoğan; Erkovan, Mustafa; M. Okutan; A. Kosemen; S. Ozturk; Y. Sahin

dc.contributor.authors	Senturk, E; Erkovan, M; Okutan, M; Kosemen, A; Ozturk, S; Sahin, Y;
dc.date.accessioned	2020-01-20T08:02:14Z
dc.date.available	2020-01-20T08:02:14Z
dc.date.issued	2015
dc.identifier.citation	Senturk, E; Erkovan, M; Okutan, M; Kosemen, A; Ozturk, S; Sahin, Y; (2015). Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 30, 485-482
dc.identifier.issn	1369-8001
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32146
dc.identifier.uri	https://doi.org/10.1016/j.mssp.2014.10.053
dc.description.abstract	We investigated the impedance parameters of cobalt titanium (Co-Ti) multilayer thin films deposited on native oxidized Si (100) substrate under ultra-high vacuum (4 x 10(-8) mbar) by magnetron sputtering at room temperature. Electrical properties of Co/Ti/Co multilayer films were analyzed depending on the thickness of Ti spacer layer with the impedance spectroscopy as a function of frequency. Co/Ti multilayer films exhibited dielectric relaxation in both real and imaginary part of dielectric constants at the kilohertz frequency region and piezoelectric properties at the megahertz frequency region. We determined that the fabricated multilayer films have complex and super imposed type behavior when DC conductivity is used at lower frequency, resonance event and relaxation properties. (C) 2014 Elsevier Ltd. All rights reserved.
dc.language	English
dc.publisher	ELSEVIER SCI LTD
dc.subject	Physics
dc.title	Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties
dc.type	Article
dc.identifier.volume	30
dc.identifier.startpage	482
dc.identifier.endpage	485
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Şentürk, Erdoğan
dc.contributor.saüauthor	Erkovan, Mustafa
dc.relation.journal	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.identifier.wos	WOS:000347266900067
dc.identifier.doi	10.1016/j.mssp.2014.10.053
dc.identifier.eissn	1873-4081
dc.contributor.author	Şentürk, Erdoğan
dc.contributor.author	Erkovan, Mustafa
dc.contributor.author	M. Okutan
dc.contributor.author	A. Kosemen
dc.contributor.author	S. Ozturk
dc.contributor.author	Y. Sahin