Phonons on group-III nitride (110) surfaces

Tütüncü, Hüseyin Murat

dc.contributor.authors	Tutuncu, HM; Miotto, R; Srivastava, GP; Tse, JS;
dc.date.accessioned	2020-01-20T08:02:13Z
dc.date.available	2020-01-20T08:02:13Z
dc.date.issued	2002
dc.identifier.citation	Tutuncu, HM; Miotto, R; Srivastava, GP; Tse, JS; (2002). Phonons on group-III nitride (110) surfaces. PHYSICAL REVIEW B, 66, -
dc.identifier.issn	1098-0121
dc.identifier.uri	https://hdl.handle.net/20.500.12619/32134
dc.identifier.uri	https://doi.org/10.1103/PhysRevB.66.115304
dc.description.abstract	We have applied the adiabatic bond-charge model within a supercell approach to study the lattice dynamics of group-III nitride (110) surfaces. The structural and electronic information necessary for these calculations is obtained from using the ab initio pseudopotential method. The phonon dispersion curves for the group-III nitride (110) surfaces are presented and compared with each other in detail. From this comparison, it is found that the InN(110) and GaN(110) surfaces show similar dynamical behavior due to their large cation-anion mass differences. It is pointed out that in general surface phonon modes on group-III nitride (110) can be related to their counterparts on non-nitride III-V(110) and II-VI(110) surfaces provided that results are scaled with respect to the reduced mass and lattice constant differences. The rotational phonon mode predicted for other semiconductor surfaces is also identified for the group-III nitride (110) surfaces.
dc.language	English
dc.publisher	AMERICAN PHYSICAL SOC
dc.subject	Physics
dc.title	Phonons on group-III nitride (110) surfaces
dc.type	Article
dc.identifier.volume	66
dc.contributor.department	Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.saüauthor	Tütüncü, Hüseyin Murat
dc.relation.journal	PHYSICAL REVIEW B
dc.identifier.wos	WOS:000178461000050
dc.identifier.doi	10.1103/PhysRevB.66.115304
dc.contributor.author	Tütüncü, Hüseyin Murat